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The primary half of the chapter is targeted on Si nanowire progress, and opinions diameter-dependent development charge and orientation results, metal catalysts, intentional doping, and the growth of Si1-xGex nanowires and axial heterostructures. This system has progressed from an interesting technique for whisker progress to a viable approach for semiconductor nanowire fabrication for functions in nanoscale electronics, optoelectronics, sensing, and power conversion.
AB - The vapor-liquid-solid (VLS) growth method has superior significantly over the previous a number of decades.
N2 - The vapor-liquid-stable (VLS) growth technique has superior considerably over the past a number of many years. This chapter reviews basic features of VLS progress with an emphasis on synthesis within a chemical vapor deposition surroundings. The growth of vertical and planar III-V nanowires is initially discussed, followed by doping and the synthesis of nanowire axial and radial (core-shell) heterostructures.
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